Lateral diffused metal-oxide-semiconductor device
US8587058B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Feb 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
Abstract
The present invention provides a lateral diffused metal-oxide-semiconductor device including a first doped region, a second doped region, a third doped region, a gate structure, and a contact metal. The first doped region and the third doped region have a first conductive type, and the second doped region has a second conductive type. The second doped region, which has a racetrack-shaped layout, is disposed in the first doped region, and has a long axis. The third doped region is disposed in the second doped region. The gate structure is disposed on the first doped region and the second doped region at a side of the third doped region. The contact metal is disposed on the first doped region at a side of the second doped region extending out along the long axis, and is in contact with the first doped region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.