Power MOSFET device with self-aligned integrated Schottky diode
US8587061B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jul 26, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power MOSFET device and manufacturing method thereof, includes the steps of selectively depositing a first conductive material in the middle region at the bottom of a contact trench and contacting with light-doped N-type epitaxial layer to form a Schottky junction and depositing a second conductive material at the side wall and bottom corner of the contact trench and contacting with P-type heavy-doped body region to form an ohmic junction. The first and second conductive materials can respectively optimize the performance of the ohmic contact and the Schottky contact without compromise. Meanwhile, the corner of the contact trench is surrounded by P-type heavy-doped region thereby effectively reducing the leakage currents accumulated at the corner of the contact trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.