Through-silicon via and fabrication method thereof
US8587131B1 · kind B1 · utility
4Cited by
1References
6Claims
0Family size
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Key dates
| Filing date | Jun 7, 2012 |
| Grant date | Nov 19, 2013 |
| Priority date | — |
| Expiry date | Jun 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A through silicon via (TSV) structure including a semiconductor substrate; a first inter-metal dielectric (IMD) layer on the semiconductor substrate; a cap layer overlying the IMD layer; a conductive layer extending through the cap layer, the first IMD layer and into the semiconductor substrate; a tungsten film capping a top surface of the conductive layer; a second IMD layer overlying the cap layer and covering the tungsten film; and an interconnect feature in the second IMD layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.