Low damage photoresist strip method for low-K dielectrics
US8591661B2 · kind B2 · utility
7Cited by
143References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 11, 2009 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Sep 17, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67207
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Improved methods for stripping photoresist and removing etch-related residues from dielectric materials are provided. In one aspect of the invention, methods involve removing material from a dielectric layer using a hydrogen-based etch process employing a weak oxidizing agent and fluorine-containing compound. Substrate temperature is maintained at a level of about 160° C. or less, e.g., less than about 90° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.