SiCN film formation method and apparatus
US8591989B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 19, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jul 19, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45546
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming an SiCN film on target substrates placed in a process field inside a process container repeats a unit cycle a plurality of times to laminate thin films respectively formed, thereby forming the SiCN film with a predetermined thickness. The unit cycle includes performing and suspending supply of a silicon source gas, a nitriding gas, and a carbon hydride gas respectively from first, second, and third gas distribution nozzles to the process field. The unit cycle does not turn any one of the gases into plasma but heats the process field to a set temperature of 300 to 700° C. with the supply of the carbon hydride gas performed for a time period in total longer than that of the supply of the silicon source gas, so as to provide the SiCN film with a carbon concentration of 15.2% to 28.5%.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.