Laser spike annealing for GaN LEDs

US8592309B2 · kind B2 · utility

Assignee

• Ultratech · US

Inventors

• Yun Wang · San Jose, US
• Andrew M. Hawryluk · Los Altos, US

Key dates

• Filing date: Nov 6, 2009
• Grant date: Nov 26, 2013
• Expiry date: Feb 15, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/833

Abstract

Methods of performing laser spike annealing (LSA) in forming gallium nitride (GaN) light-emitting diodes (LEDs) as well as GaN LEDs formed using LSA are disclosed. An exemplary method includes forming atop a substrate a GaN multilayer structure having a n-GaN layer and a p-GaN layer that sandwich an active layer. The method also includes performing LSA by scanning a laser beam over the p-GaN layer. The method further includes forming a transparent conducting layer atop the GaN multilayer structure, and adding a p-contact to the transparent conducting layer and a n-contact to the n-GaN layer. The resultant GaN LEDs have enhanced output power, lower turn-on voltage and reduced series resistance.