Yun Wang
33Patents
14h-index
30Co-inventors
81Inventor score
Filing activity: Mar 2, 1992 → Sep 6, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6479821B1 | Thermally induced phase switch for laser thermal processing | Physics | 273 | Expired |
| US6635588B1 | Method for laser thermal processing using thermally induced reflectivity switch | Electricity | 265 | Expired |
| US6365476B1 | Laser thermal process for fabricating field-effect transistors | Electricity | 93 | Expired |
| US6274488A | Method of forming a silicide region in a Si substrate and a device having same | Electricity | 63 | Expired |
| US6383956B2 | Method of forming thermally induced reflectivity switch for laser thermal processing | Electricity | 45 | Expired |
| US6380044B1 | High-speed semiconductor transistor and selective absorption process forming same | Electricity | 44 | Expired |
| US6303476A | Thermally induced reflectivity switch for laser thermal processing | Electricity | 40 | Expired |
| US6645838B1 | Selective absorption process for forming an activated doped region in a semiconductor | Electricity | 30 | Expired |
| US6570656B1 | Illumination fluence regulation system and method for use in thermal processing employed in the fabrication of reduced-dimension integrated circuits | Performing Operations; Transporting | 29 | Expired |
| US6495390B2 | Thermally induced reflectivity switch for laser thermal processing | Electricity | 26 | Expired |
| US7281072B2 | Redundant external storage virtualization computer system | Physics | 25 | Expired |
| US6420264B1 | Method of forming a silicide region in a Si substrate and a device having same | Electricity | 22 | Expired |
| US6635541B1 | Method for annealing using partial absorber layer exposed to radiant energy and article made with partial absorber layer | Emerging Cross-Sectional Technologies | 17 | Expired |
| US8309474B1 | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication | Electricity | 16 | Active |
| US6844250B1 | Method and system for laser thermal processing of semiconductor devices | Electricity | 14 | Expired |
| US8546805B2 | Two-beam laser annealing with improved temperature performance | Electricity | 9 | Active |
| US9490128B2 | Non-melt thin-wafer laser thermal annealing methods | Electricity | 6 | Active |
| US8301809B2 | Storage virtualization computer system and external controller thereof | Physics | 3 | Expired |
| US5337322A | Method of processing stored data containing parity data | Physics | 3 | Expired |
| US9302348B2 | Ultrafast laser annealing with reduced pattern density effects in integrated circuit fabrication | Performing Operations; Transporting | 2 | Active |
| US10808290B2 | Clean and rapid smelting method in an electric arc furnace with full scrap steel | Emerging Cross-Sectional Technologies | 2 | Active |
| US8460959B2 | Fast thermal annealing of GaN LEDs | Electricity | 1 | Active |
| US8592309B2 | Laser spike annealing for GaN LEDs | Electricity | 1 | Active |
| US8906742B2 | Two-beam laser annealing with improved temperature performance | Electricity | 1 | Active |
| US10452270B2 | Storage virtualization computer system and external controller therefor | Physics | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.