Method for fabricating an aperture
US8592321B2 · kind B2 · utility
3Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2011 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Jun 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating an aperture is disclosed. The method includes the steps of: forming a hard mask containing carbon on a surface of a semiconductor substrate; and using a non-oxygen element containing gas to perform a first etching process for forming a first aperture in the hard mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.