Methods of forming conductive structures and methods of forming DRAM cells
US8592985B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 10, 2012 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Apr 10, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Some embodiments include methods of forming conductive structures. An electrically conductive material may be deposited with a first deposition method. The first deposition method has a first deposition rate and forms a first portion of a conductive structure. A second portion of the conductive structure may be formed by depositing the electrically conductive material with a second deposition method having a second deposition rate. The second deposition rate may be different from the first deposition rate by at least about a factor of 3. In some embodiments, a region of the conductive structure is utilized as a transistor gate of a DRAM cell. Some embodiments include semiconductor constructions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.