Semiconductor device and method of manufacturing the same
US8592996B2 · kind B2 · utility
2Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2010 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Nov 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device wherein a semiconductor element made of Si or Si group material mounted on a substrate, the semiconductor element is mounted on the substrate and the semiconductor element is bonded to a silver bonding material via a oxide film formed on the semiconductor element. The bonding material comprising silver oxide particles having an average particle size of 1 nm to 50 nm and an organic reducing agent is used for bonding in air, which gives a high bonding strength to the oxide on the semiconductor element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.