Spin-transfer torque magnetic random access memory having magnetic tunnel junction with perpendicular magnetic anisotropy
US8593862B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 17, 2009 |
| Grant date | Nov 26, 2013 |
| Priority date | — |
| Expiry date | Dec 25, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A spin-torque transfer memory random access memory (STTMRAM) element includes a fixed layer formed on top of a substrate and a tunnel layer formed upon the fixed layer and a composite free layer formed upon the tunnel barrier layer and made of an iron platinum alloy with at least one of X or Y material, X being from a group consisting of: boron (B), phosphorous (P), carbon (C), and nitride (N) and Y being from a group consisting of: tantalum (Ta), titanium (Ti), niobium (Nb), zirconium (Zr), tungsten (W), silicon (Si), copper (Cu), silver (Ag), aluminum (Al), chromium (Cr), tin (Sn), lead (Pb), antimony (Sb), hafnium (Hf) and bismuth (Bi), molybdenum (Mo) or rhodium (Ru), the magnetization direction of each of the composite free layer and fixed layer being substantially perpendicular to the plane of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.