Method of fabricating a microelectronic device with programmable memory
US8597975B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 2, 2012 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Jul 2, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8825
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A method is provided for fabricating a microelectronic device with programmable memory that includes: i) depositing an intermediate layer of a material having a chalcogenide on a first electrode; ii) irradiating the intermediate layer of step i with ultraviolet radiation; iii) depositing an ionizable metallic layer on the intermediate layer obtained in step ii; iv) diffusing the metal ions originating from the ionizable metallic layer of step iii into the intermediate layer to form a chalcogenide material containing metal ions; and v) depositing a second electrode on the layer of chalcogenide material containing metal ions obtained in step iv to form the microelectronic device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.