Silicon etch with passivation using plasma enhanced oxidation
US8598037B2 · kind B2 · utility
7Cited by
11References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2011 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3065
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of etching a silicon layer through a patterned mask is provided. The method uses an etch chamber in which the silicon layer is placed. The method includes (a) providing the silicon layer having the patterned mask formed thereon, (b) providing an etch gas comprising a fluorine containing gas and an oxygen and hydrogen containing gas into the etch chamber in which the silicon layer has been placed, (c) generating a plasma from the etch gas, (d) etching features into the silicon layer through the patterned mask using the plasma, and (e) stopping the etch gas. The oxygen and hydrogen containing gas contains water vapor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.