Resistive memory elements exhibiting increased interfacial adhesion strength, methods of forming the same, and related resistive memory cells and memory devices
US8598560B1 · kind B1 · utility
13Cited by
5References
22Claims
0Family size
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Key dates
| Filing date | Jul 12, 2012 |
| Grant date | Dec 3, 2013 |
| Priority date | — |
| Expiry date | Jul 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8833
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistive memory element comprising a conductive material, an active material over the conductive material, and an ion source material on the active material and comprising at least one chalcogen, at least one active metal, and at least one additional element. Additional resistive memory elements, as well as methods of forming resistive memory elements, and related resistive memory cells and resistive memory devices are also described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.