Memory cell structures

US8598562B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Scott E. Sills · Boise, US

Key dates

• Filing date: Jul 1, 2011
• Grant date: Dec 3, 2013
• Expiry date: Nov 30, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8836

Abstract

The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode.