Raised trench metal semiconductor alloy formation
US8603881B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Sep 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact via hole is formed through at least one dielectric layer over a semiconductor substrate. A semiconductor material is deposited at the bottom of the contact via hole and atop the at least one dielectric layer by ion cluster deposition. An angled oxygen cluster deposition is performed to convert portions of the semiconductor material on the top surface of the at least one dielectric layer into a semiconductor oxide, while oxygen is not implanted into the deposited semiconductor material at the bottom of the contact via hole. A metal semiconductor alloy is formed at the bottom of the contact hole by deposition of a metal and an anneal. The semiconductor oxide at the top of the at least one dielectric layer can be removed during a preclean before metal deposition, a postclean after metal semiconductor alloy formation, and/or during planarization for forming contact via structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.