Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium
US8603887B2 · kind B2 · utility
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Key dates
| Filing date | Jul 27, 2012 |
| Grant date | Dec 10, 2013 |
| Priority date | — |
| Expiry date | Jul 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing a silicon oxide layer on a substrate including a silicon region and a silicon-germanium region, including the steps of: forming a very thin silicon layer having a thickness ranging from 0.1 to 1 nm above silicon-germanium; and depositing a silicon oxide layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.