Olivier Gourhant
3Patents
0h-index
9Co-inventors
24Inventor score
Filing activity: Apr 10, 2012 → Mar 3, 2015
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8603887B2 | Method for depositing a silicon oxide layer of same thickness on silicon and on silicon-germanium | Electricity | 0 | Active |
| US9437498B2 | Method for the formation of different gate metal regions of MOS transistors | Electricity | 0 | Active |
| US8802575B2 | Method for forming the gate insulator of a MOS transistor | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.