Nonvolatile memory device and method of fabricating the same

US8604537B2 · kind B2 · utility

Assignee

• SK hynix Inc. · KR

Inventors

• Ki Hong Lee · Seoul, KR
• Kwon Hong · Seojong-myeon, KR

Key dates

• Filing date: Jun 29, 2009
• Grant date: Dec 10, 2013
• Expiry date: Nov 12, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/694

Abstract

There is provided a nonvolatile memory device having a tunnel dielectric layer formed over a substrate, the charge capturing layer formed over the tunnel dielectric layer and including a combination of at least one charge storage layer and at least one charge trap layer, a charge blocking layer formed over the charge capturing layer, and a gate electrode formed over the charge blocking layer.