Layer-layer etch of non volatile materials using plasma
US8608973B1 · kind B1 · utility
21Cited by
1References
18Claims
0Family size
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Inventor
Key dates
| Filing date | Jun 1, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/01
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for etching a metal layer, comprising plurality of cycles is provided. In each cycle, an etch gas comprising PF3, CO and NO, or COF2 is flowed into a process chamber. In each cycle, the etch gas is formed into a plasma. In each cycle, the flow of the etch gas is stopped.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.