Joydeep Guha
18Patents
8h-index
25Co-inventors
64Inventor score
Filing activity: Feb 3, 2012 → Apr 30, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8784676B2 | Waferless auto conditioning | Electricity | 263 | Active |
| US9837286B2 | Systems and methods for selectively etching tungsten in a downstream reactor | Electricity | 103 | Active |
| US9601319B1 | Systems and methods for eliminating flourine residue in a substrate processing chamber using a plasma-based process | Electricity | 96 | Active |
| US9082826B2 | Methods and apparatuses for void-free tungsten fill in three-dimensional semiconductor features | Electricity | 32 | Active |
| US10622189B2 | Adjustable side gas plenum for edge rate control in a downstream reactor | Electricity | 27 | Active |
| US8608973B1 | Layer-layer etch of non volatile materials using plasma | Electricity | 21 | Active |
| US9147581B2 | Dual chamber plasma etcher with ion accelerator | Electricity | 21 | Active |
| US9972478B2 | Method and process of implementing machine learning in complex multivariate wafer processing equipment | Electricity | 18 | Active |
| US10615009B2 | System implementing machine learning in complex multivariate wafer processing equipment | Electricity | 7 | Active |
| US10134605B2 | Dual chamber plasma etcher with ion accelerator | Electricity | 4 | Active |
| US9018103B2 | High aspect ratio etch with combination mask | Electricity | 4 | Active |
| US9431269B2 | Dual chamber plasma etcher with ion accelerator | Electricity | 4 | Active |
| US8895323B2 | Method of forming a magnetoresistive random-access memory device | Electricity | 2 | Active |
| US9870932B1 | Pressure purge etch method for etching complex 3-D structures | Electricity | 1 | Active |
| US9514955B2 | Patterning of a hard mask material | Electricity | 0 | Active |
| US9659783B2 | High aspect ratio etch with combination mask | Electricity | 0 | Active |
| US10242883B2 | High aspect ratio etch of oxide metal oxide metal stack | Electricity | 0 | Active |
| US9899227B2 | System, method and apparatus for ion milling in a plasma etch chamber | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.