Magnetic tunnel junction comprising a polarizing layer
US8609439B2 · kind B2 · utility
42Cited by
3References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 12, 2012 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Jan 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present disclosure concerns memory device comprising magnetic tunnel junction comprising a tunnel barrier layer between a first ferromagnetic layer having a first magnetization with a fixed orientation and a second ferromagnetic layer having a second magnetization being freely orientable, and a polarizing layer having a polarizing magnetization substantially perpendicular to the first and second magnetization; the first and second ferromagnetic layers being annealed such that a tunnel magnetoresistance of the magnetic tunnel junction is equal or greater than about 150%. Also disclosed is a method of forming the MRAM cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.