Semiconductor device with DRAM bit lines made from same material as gate electrodes in non-memory regions of the device, and methods of making same

US8609457B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Peter Baars · Dresden, DE
• Till Schloesser · Dresden, DE
• Frank Jakubowski · Dresden, DE

Key dates

• Filing date: May 3, 2011
• Grant date: Dec 17, 2013
• Expiry date: Oct 31, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/482

Abstract

Generally, the present disclosure is directed to a semiconductor device with DRAM bit lines made from the same material as the gate electrodes in non-memory regions of the device, and methods of making the same. One illustrative method disclosed herein comprises forming a semiconductor device including a memory array and a logic region. The method further comprises forming a buried word line in the memory array and, after forming the buried word line, performing a first common process operation to form at least a portion of a conductive gate electrode in the logic region and to form at least a portion of a conductive bit line in the memory array.