Methods of forming efuse devices

US8609485B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Andreas Kurz · Oberursel, DE
• Andy Wei · Queensbury, US
• Christoph Schwan · Gebhardshain, DE

Key dates

• Filing date: Nov 8, 2010
• Grant date: Dec 17, 2013
• Expiry date: May 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor-based electronic fuse may be provided in a sophisticated semiconductor device having a bulk configuration by appropriately embedding the electronic fuse into a semiconductor material of reduced heat conductivity. For example, a silicon/germanium fuse region may be provided in the silicon base material. Consequently, sophisticated gate electrode structures may be formed on the basis of replacement gate approaches on bulk devices substantially without affecting the electronic characteristics of the electronic fuses.