Method for making semiconductor device comprising replacement gate electrode structures with an enhanced diffusion barrier

US8609524B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Kai Frohberg · Meißen, DE
• Frank Feustal · Dresden, DE
• Thomas Werner · Radebeul, DE

Key dates

• Filing date: Sep 30, 2010
• Grant date: Dec 17, 2013
• Expiry date: Nov 2, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/01
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated semiconductor devices, the integrity of the device level may be enhanced after applying a replacement gate approach by providing an additional diffusion barrier layer, such as a silicon nitride layer, thereby obtaining a similar degree of diffusion blocking capabilities as in semiconductor devices without performing a replacement gate approach.