Structure for protecting an integrated circuit against electrostatic discharges
US8610216B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 20, 2010 |
| Grant date | Dec 17, 2013 |
| Priority date | — |
| Expiry date | Nov 22, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/126
Abstract
A structure for protecting an integrated circuit against electrostatic discharges, including a device for removing overvoltages between first and second power supply rails; and a protection cell connected to a pad of the circuit including a diode having an electrode, connected to a region of a first conductivity type, connected to the second power supply rail and having an electrode, connected to a region of a second conductivity type, connected to the pad and, in parallel with the diode, a thyristor having an electrode, connected to a region of the first conductivity type, connected to the pad and having a gate, connected to a region of the second conductivity type, connected to the first rail, the first and second conductivity types being such that, in normal operation, when the circuit is powered, the diode is non-conductive.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.