Non-planar capacitor and method of forming the non-planar capacitor

US8610249B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• James P. Di Sarro · Allen, US
• Robert J. Gauthier, Jr. · South Burlington, US
• Tom C. Lee · South Burlington, US
• Junjun Li · Williston, US
• Souvick Mitra · South Burlington, US
• Christopher S. Putnam · South Burlington, US

Key dates

• Filing date: Mar 30, 2012
• Grant date: Dec 17, 2013
• Expiry date: Mar 30, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

Disclosed herein are embodiments of non-planar capacitor. The non-planar capacitor can comprise a plurality of fins above a semiconductor substrate. Each fin can comprise at least an insulator section on the semiconductor substrate and a semiconductor section, which has essentially uniform conductivity, stacked above the insulator section. A gate structure can traverse the center portions of the fins. This gate structure can comprise a conformal dielectric layer and a conductor layer (e.g., a blanket or conformal conductor layer) on the dielectric layer. Such a non-planar capacitor can exhibit a first capacitance, which is optionally tunable, between the conductor layer and the fins and a second capacitance between the conductor layer and the semiconductor substrate. Also disclosed herein are method embodiments, which can be used to form such a non-planar capacitor and which are compatible with current state of the art multi-gate non-planar field effect transistor (MUGFET) processing.