Photovoltaic solar cell device manufacture

US8614115B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lawrence A. Clevenger · Saratoga Springs, US
• Harold J. Hovel · Katonah, US
• Rainer Krause · Hochheim, DE
• Kevin S. Petrarca · Newburgh, US
• Gerd Pfeiffer · Poughquag, US
• Kevin M. Prettyman · Holmes, US
• Carl Radens · Lagrangeville, US
• Brian C. Sapp · Guilderland, US

Key dates

• Filing date: Oct 29, 2010
• Grant date: Dec 24, 2013
• Expiry date: Jan 12, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50

Abstract

A method for manufacturing a photovoltaic solar cell device includes the following. A p-n junction having a first doping density is formed. Formation of the p-n junction is enhanced by introducing a second doping density to form high doped areas for a dual emitter application. The high doped areas are defined by a masking process integrated with the formation of the p-n junction, resulting in a mask pattern of the high doped areas. A metallization of the high doped areas occurs in accordance with the mask pattern of the high doped areas.