Solder ball contact susceptible to lower stress
US8614512B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Dec 24, 2013 |
| Priority date | — |
| Expiry date | Sep 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/00014
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A solder ball contact and a method of making a solder ball contact includes: a first insulating layer with a via formed on an integrated circuit (IC) chip and a metal pad; an under bump metallurgy (UBM) structure disposed within the via and on a portion of the first insulating layer, surrounding the via; a second insulating layer formed on an upper surface of an outer portion of the UBM structure that is centered on the via; and a solder ball that fills the via and is disposed above an upper surface of an inner portion of the UBM structure that contacts the via, in which the UBM structure that underlies the solder ball is of a greater diameter than the solder ball.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.