Semiconductor chip device with polymeric filler trench
US8617926B2 · kind B2 · utility
3Cited by
4References
23Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Sep 9, 2010 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Oct 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/167
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing is provided that includes providing a semiconductor chip with an insulating layer. The insulating layer includes a trench. A second semiconductor chip is stacked on the first semiconductor chip to leave a gap. A polymeric filler is placed in the gap wherein a portion of the polymeric filler is drawn into the trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.