Patent · US Active

SOI device with a buried insulating material having increased etch resistivity

US8617940B2 · kind B2 · utility

4Cited by

5References

20Claims

0Family size

Assignee

Advanced Micro Devices, Inc. · US

Inventors

Andreas Kurz · Oberursel, DE
Roman Boschke · Dresden, DE
Christoph Schwan · Gebhardshain, DE
John Morgan · Portland, US

Key dates

Filing date	Dec 16, 2009
Grant date	Dec 31, 2013
Priority date	—
Expiry date	Aug 2, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH10D86/201
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In SOI devices, the PN junction of circuit elements, such as substrate diodes, is formed in the substrate material on the basis of the buried insulating material that provides increased etch resistivity during wet chemical cleaning and etch processes. Consequently, undue exposure of the PN junction formed in the vicinity of the sidewalls of the buried insulating material may be avoided, which may cause reliability concerns in conventional SOI devices comprising a silicon dioxide material as the buried insulating layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.