High temperature tungsten metallization process

US8617985B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Joshua Collins · Sunnyvale, US
• Murali Narasimhan · San Jose, US
• Jingjing Liu · Shanghai, CN
• Sang-Hyeob Lee · Fremont, US
• Kai Wu · Palo Alto, US
• Avgerinos V. Gelatos · Scotts Valley, US

Key dates

• Filing date: Oct 25, 2012
• Grant date: Dec 31, 2013
• Expiry date: Oct 25, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Embodiments of the invention provide an improved process for depositing tungsten-containing materials. In one embodiment, the method for forming a tungsten-containing material on a substrate includes forming an adhesion layer containing titanium nitride on a dielectric layer disposed on a substrate, forming a tungsten nitride intermediate layer on the adhesion layer, wherein the tungsten nitride intermediate layer contains tungsten nitride and carbon. The method further includes forming a tungsten barrier layer (e.g., tungsten or tungsten-carbon material) from the tungsten nitride intermediate layer by thermal decomposition during a thermal annealing process (e.g., temperature from about 700° C. to less than 1,000° C.). Subsequently, the method includes optionally forming a nucleation layer on the tungsten barrier layer, optionally exposing the tungsten barrier layer and/or the nucleation layer to a reducing agent during soak processes, and forming a tungsten bulk layer on or over the tungsten barrier layer and/or the nucleation layer.