Method of reducing pattern collapse in high aspect ratio nanostructures
US8617993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 1, 2010 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Aug 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02057
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.