Selective wet etching of hafnium aluminum oxide films
US8618000B2 · kind B2 · utility
3Cited by
49References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2012 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Aug 14, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods and etchant compositions for wet etching to selectively remove a hafnium aluminum oxide (HfAlOx) material relative to silicon oxide (SiOx) are provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.