Low micropipe 100 mm silicon carbide wafer
US8618552B2 · kind B2 · utility
9Cited by
21References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 15, 2007 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Feb 19, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/40
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A high quality single crystal wafer of SiC is disclosed having a diameter of at least about 100 mm and a micropipe density of less than about 25 cm−2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.