Patent · US Active

Process for producing silicon carbide crystals having increased minority carrier lifetimes

US8618553B2 · kind B2 · utility

1Cited by

13References

12Claims

0Family size

Assignee

Cree, Inc. · US

Inventors

Calvin H. Carter, Jr. · Cary, US
Jason Jenny · Raleigh, US
David Phillip Malta · Raleigh, US
Hudson M. Hobgood · Pittsboro, US
Valeri F. Tsvetkov · Durham, US
Mrinal K. Das · Morrisville, US

Key dates

Filing date	Aug 30, 2010
Grant date	Dec 31, 2013
Priority date	—
Expiry date	Feb 15, 2031

Classification

Technology area (CPC C)Chemistry; Metallurgy
CPC primaryC30B33/02
WIPO fieldSurface technology, coating
WIPO sectorChemistry

Abstract

A process is described for producing silicon carbide crystals having increased minority carrier lifetimes. The process includes the steps of heating and slowly cooling a silicon carbide crystal having a first concentration of minority carrier recombination centers such that the resultant concentration of minority carrier recombination centers is lower than the first concentration.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.