Silicon carbide semiconductor device and method of manufacturing the same

US8618555B2 · kind B2 · utility

Assignees

• DENSO CORPORATION · JP
• TOYOTA JIDOSHA KABUSHIKI KAISHA · JP

Inventors

• Naohiro Suzuki · Anjo, JP
• Hideo Matsuki · Yokosuka, JP
• Masahiro Sugimoto · Toyota, JP
• Hidefumi Takaya · Toyota, JP
• Jun Morimoto · Nisshin, JP
• Tsuyoshi Ishikawa · Tokyo, JP
• Narumasa Soejima · Nisshin, JP
• Yukihiko Watanabe · Nagakute, JP

Key dates

• Filing date: May 27, 2011
• Grant date: Dec 31, 2013
• Expiry date: Dec 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8325

Abstract

The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.