Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors
US8618560B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2012 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Sep 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8514
Abstract
A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.