Semiconductor devices formed on a continuous active region with an isolating conductive structure positioned between such semiconductor devices, and methods of making same

US8618607B1 · kind B1 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Mahbub Rashed · Cupertino, US
• David Doman · Austin, US
• Marc Tarabbia · Austin, US
• Irene Y. Lin · Los Altos Hills, US
• Jeff Kim · San Jose, US
• Chinh Nguyen · San Jose, US
• Steve Soss · Patterson, US
• Scott Johnson · Wappingers Falls, US
• Subramani Kengeri · Norwood, US
• Suresh Venkatesan · Los Gatos, US

Key dates

• Filing date: Jul 2, 2012
• Grant date: Dec 31, 2013
• Expiry date: Jul 2, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/907

Abstract

One illustrative device disclosed herein includes a continuous active region defined in a semiconducting substrate, first and second transistors formed in and above the continuous active region, each of the first and second transistors comprising a plurality of doped regions formed in the continuous active region, a conductive isolating electrode positioned above the continuous active region between the first and second transistors and a power rail conductively coupled to the conductive isolating electrode.