FinFET structures and methods for fabricating the same
US8618616B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
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Key dates
| Filing date | Apr 13, 2012 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | May 29, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
Abstract
A method for fabricating a FinFET structure includes fabricating a plurality of parallel fins overlying a semiconductor substrate, each of the plurality of parallel fins having sidewalls and forming an electrode over the semiconductor substrate and between the parallel fins. The electrode is configured to direct an electrical field into the fins, thereby affecting the threshold voltage of the FinFET structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.