Semiconductor device and fabricating method thereof
US8618658B1 · kind B1 · utility
3Cited by
3References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 19, 2010 |
| Grant date | Dec 31, 2013 |
| Priority date | — |
| Expiry date | Jul 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/381
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a fabrication method thereof are provided. An electrically conductive elastic member is formed on a semiconductor die, and a conductive bump is formed on the elastic member. Accordingly, since the conductive bump is formed on the elastic member, or to protrude from a top surface of the elastic member, the height and thus diameter of the conductive bump is reduced allowing a fine pitch to be realized. Further, the elastic member is elastic and thus mitigates external impacts from being transferred from the conductive bump to the semiconductor die.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.