Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
US8623452B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 10, 2010 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Feb 4, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1114
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A spin toque transfer magnetic random access memory (STTMRAM) element and a method of manufacturing the same is disclosed having a free sub-layer structure with enhanced internal stiffness. A first free sub-layer is deposited, the first free sub-layer being made partially of boron (B), annealing is performed of the STTMRAM element at a first temperature after depositing the first free sub-layer to reduce the B content at an interface between the first free sub-layer and the barrier layer, the annealing causing a second free sub-layer to be formed on top of the first free sub-layer and being made partially of B, the amount of B of the second free sub-layer being greater than the amount of B in the first free sub-layer. Cooling down the STTMRAM element to a second temperature that is lower than the first temperature and depositing a third free sub-layer directly on top of the second free layer, with the third free sub-layer being made partially of boron (B), wherein the amount of B in the third sub-free layer is less than the amount of B in the second free sub-layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.