Semiconductor processing apparatus comprising a coating formed from a solid solution of yttrium oxide and zirconium oxide
US8623527B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2011 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Aug 31, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A ceramic coated article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas. The ceramic coated article includes an aluminum substrate coated with a solid solution coating formed from a combination of yttrium oxide and zirconium oxide. The ceramic coating is formed from yttrium oxide at a molar concentration ranging from about 90 mole % to about 70 mole %, and zirconium oxide at a molar concentration ranging from about 10 mole % to about 30 mole %. In a second embodiment, the ceramic article includes ceramic which is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.