Methods of forming electrostatic discharge devices
US8623731B2 · kind B2 · utility
1Cited by
4References
34Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 31, 2012 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Dec 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Electrostatic discharge devices and methods of forming thereof are disclosed. In one embodiment, a semiconductor device includes an electrostatic discharge (ESD) device region disposed within a semiconductor body. A first ESD device is disposed in a first region of the ESD device region, and a second ESD device disposed in a second region of the ESD device region. The second region is separated from the first region by a first trench.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.