Vertical conduction power electronic device and corresponding realization method
US8624332B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2005 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | May 6, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/233
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A vertical conduction electronic power device includes respective gate, source and drain areas in an epitaxial layer arranged on a semiconductor substrate. The respective gate, source and drain metallizations may be formed by a first metallization level. Corresponding gate, source and drain terminals or pads may be formed by a second metallization level. The power device is configured as a set of modular areas extending parallel to each other, each having a rectangular elongate source area perimetrically surrounded by a narrow gate area. The modular areas are separated from each other by regions with the drain area extending parallel and connected at the opposite ends thereof to a second closed region with the drain area forming a device outer peripheral edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.