Methods of programming and erasing programmable metallization cells (PMCs)
US8625331B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 2012 |
| Grant date | Jan 7, 2014 |
| Priority date | — |
| Expiry date | Jul 10, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/82
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An integrated circuit can include a plurality of programmable metallization cells (PMCs) in a memory array, each PMC comprising an ion conducting material, an active metal dissolvable in the ion conducting material, and two electrodes, a first electrode of at least one PMC being coupled to a program node; and a plurality of program and verify circuits, each including a current source section to enable at least one current path between the program node and a power supply node in a program and verify operation, and a verify signal generator circuit comprising at least a first comparator having a first input coupled to the program node, a second input coupled to receive a first reference voltage, and a comparator output to provide a verify signal that indicates a program operation is complete.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.