Replacement metal gate structures for effective work function control

US8629014B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Unoh Kwon · Fishkill, US
• Michael P. Chudzik · Beacon, US
• Ravikumar Ramachandran · Beacon, US

Key dates

• Filing date: Sep 20, 2010
• Grant date: Jan 14, 2014
• Expiry date: Jan 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A stack of a barrier metal layer and a first-type work function metal layer is deposited in replacement metal gate schemes. The barrier metal layer can be deposited directly on the gate dielectric layer. The first-type work function metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the barrier metal layer in the regions of a second type field effect transistor. Alternately, the first-type work function layer can be deposited directly on the gate dielectric layer. The barrier metal layer is patterned to be present only in regions of a first type field effect transistor. A second-type work function metal layer is deposited directly on the gate dielectric layer in the regions of the second type field effect transistor. A conductive material fill and planarization form dual work function replacement gate structures.