Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
US8629016B1 · kind B1 · utility
5Cited by
423References
15Claims
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Key dates
| Filing date | Apr 30, 2012 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Apr 30, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multiple transistor types are formed in a common epitaxial layer by differential out-diffusion from a doped underlayer. Differential out-diffusion affects the thickness of a FET channel, the doping concentration in the FET channel, and distance between the gate dielectric layer and the doped underlayer. Differential out-diffusion may be achieved by differentially applying a dopant migration suppressor such as carbon; differentially doping the underlayer with two or more dopants having the same conductivity type but different diffusivities; and/or differentially applying thermal energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.