Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratio
US8629067B2 · kind B2 · utility
7Cited by
164References
19Claims
0Family size
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Key dates
| Filing date | Dec 16, 2010 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | Dec 16, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02337
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of forming dielectric layers are described. The method may include the steps of mixing a silicon-containing precursor with a radical-nitrogen precursor, and depositing a dielectric layer on a substrate. The radical-nitrogen precursor is formed in a remote plasma by flowing hydrogen (H2) and nitrogen (N2) into the plasma in order to allow adjustment of the nitrogen/hydrogen ratio. The dielectric layer is initially a silicon-and-nitrogen-containing layer which may be converted to a silicon-and-oxygen-containing layer by curing and/or annealing the film in an oxygen-containing environment.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.