Multi-station sequential curing of dielectric films
US8629068B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 2013 |
| Grant date | Jan 14, 2014 |
| Priority date | — |
| Expiry date | May 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention addresses provides improved methods of preparing a low-k dielectric material on a substrate. The methods involve multiple operation ultraviolet curing processes in which UV intensity, wafer substrate temperature and other conditions may be independently modulated in each operation. In certain embodiments, a film containing a structure former and a porogen is exposed to UV radiation in a first operation to facilitate removal of the porogen and create a porous dielectric film. In a second operation, the film is exposed to UV radiation to increase cross-linking within the porous film. In certain embodiments, the curing takes place in a multi-station UV chamber wherein UV intensity and substrate temperature may be independently controlled at each station.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.